Silicon carbide (SiC) has already been used widely for abrasives, light-emitting diodes and transistors. Recent nanotechnology advances have enabled it an emerging scalable material platform for integrated nonlinear and quantum photonics, outperforming its counterparts such as diamond, III-V semiconductors and Si etc. in some aspects. This talk will present the key nanotechnologies to make high-performance nanophotonic devices based on SiC on insulator (SiCOI) platform and review the state of the art of SiCOI based nonlinear and quantum devices. At last, the prospect and challenges of SiCOI platform will be discussed for fully unlocking its potential in photonics.
Haiyan Ou, PhD in 2000 from Institute of Semiconductors of Chinese Academy of Sciences, associate professor since 2005 at Technical University of Denmark (DTU). Her research interest is primarily in semiconductors materials and devices for integrated optics, photovoltaics and light emission. She has been working on integrated optics for 23 years being especially involved in several research activities and projects on building blocks for integrated optics, silica-on-silicon arrayed waveguide gratings, nonlinear integrated waveguides, silicon photonics for optical communications, innovative solution for next generation communication infrastructure etc. She is a PI/WP leader in LEDSiC (a new type of white light-emitting diode using fluorescent silicon carbide), NORLED (Nordic light-emitting diode initiative). She is coordinating an EU horizon 2020 FET Open project SiComb (CMOS compatible and ultrabroad-band on-chip SiC frequency comb).